Electrical and electronic engineering articles within Communications Materials

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  • Article
    | Open Access

    Nonlinear memory devices such as memristors, memcapacitors, and meminductors, are the building blocks of energy-efficient neuromorphic computing. Here, the authors propose a superconducting circuit design acting as a microwave quantum memcapacitor, which could be implemented in neuromorphic quantum computing architectures.

    • Xinyu Qiu
    • , Shubham Kumar
    •  & Francisco Albarrán-Arriagada

  • Review Article
    | Open Access

    A key aspect of wearable devices used in personal health monitoring are the electrodes that make contact with the skin. This Review discusses how the materials and structure of electrodes used in these devices are vital to their performance, including how altering these factors might optimize their function.

    • Kyeonghee Lim
    • , Hunkyu Seo
    •  & Jang-Ung Park

  • Review Article
    | Open Access

    Three-dimensional silicon-based lithium-ion microbatteries have potential use in miniaturized electronics that require independent energy storage. Here, their developments are discussed in terms of their material compatibility, cell designs, fabrication methods, and performance in various applications.

    • Andam Deatama Refino
    • , Calvin Eldona
    •  & Hutomo Suryo Wasisto

  • Article
    | Open Access

    Nanobubbles are sources of charge trapping that influence the performance and stability of devices based on 2D materials. Here, Kelvin probe force microscopy is used to study the origin and mechanism of charge trapping in nanobubbles of MoS2 on a SiO2 substrate.

    • Dohyeon Jeon
    • , Haesol Kim
    •  & Taekyeong Kim

  • Article
    | Open Access

    Designing artificial acoustic metasurfaces via traditional numerical simulations is computationally challenging. Here, the authors introduce a data-driven neural network approach for the inverse design of membrane-type sound absorbers, testing the desired properties on two devices fabricated using model-estimated parameters.

    • Hamza Baali
    • , Mahmoud Addouche
    •  & Abdelkrim Khelif

  • Article
    | Open Access

    Vanadium dioxide is a strongly correlated material interesting for its ultra-fast resistive switching controlled by an electric-field-driven insulator-metal transition. Here, VO2 stochastic oscillator power sensors for mm-wave to sub-THz radiation are demonstrated, displaying high responsivities, low noise, and a small scalable footprint.

    • Fatemeh Qaderi
    • , Teodor Rosca
    •  & Adrian M. Ionescu

  • Article
    | Open Access

    Developing scalable strategies of miniaturization and integration is key for achieving high-density integrated circuit devices. Here, the authors propose a silicon-based one-transistor device with a 40% reduction in circuit footprint, which combines the functionalities of logic gates, memory, and artificial synapses for mass production.

    • Mingzhi Dai
    • , Zhitang Song
    •  & Junhao Chu

  • Article
    | Open Access

    Microscale resonators are widely used in modern technology and achieving large tunability of their resonant frequency is highly desirable. Here, a design for electro-superlubric springs, based on a restoring force between sliding solid surfaces, is predicted to have continuously tunable resonant frequencies from zero to several GHz.

    • Zhanghui Wu
    • , Xuanyu Huang
    •  & Quanshui Zheng

  • Article
    | Open Access

    Three-dimensional magnetometers are key for detecting the motion of objects in automated electronics, but typically require multiple sensors on orthogonal planes. Here, a compact planar-type 3D magnetometer with low power consumption is realized using a topological ferromagnetic Fe-Sn heterostructure.

    • Junichi Shiogai
    • , Kohei Fujiwara
    •  & Atsushi Tsukazaki

  • Article
    | Open Access

    Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photoresponsivity of 622.2 A W−1.

    • Heekyeong Park
    • , Jiyoul Lee
    •  & Sunkook Kim

  • Article
    | Open Access

    Thin-film transistors based on amorphous oxide semiconductors have promising applications, but their stability is hampered by negative bias illumination stress. Here, a systematic study of lanthanide-doped indium oxide semiconductors reveals that Pr and Tb are most efficient in improving the photostability of devices.

    • Penghui He
    • , Hua Xu
    •  & Junbiao Peng

  • Article
    | Open Access

    Oxygen species on a TiO2 surface exist in different redox states, which can be switched between by electron tunneling with an atomic force tip. Here, a fast experimental setup enables statistically significant tunneling rates to be determined, revealing changes in electronic structure.

    • Yuuki Adachi
    • , Ján Brndiar
    •  & Lev Kantorovich

  • Article
    | Open Access

    γ-phase CsPbI3 perovskites are attractive for solar cells, but suffer from environmental degradation. Here, the addition of an ultraviolet-curable polymer network improves structural and electrical stability, retaining 90% of its electrical properties after exposure to air for 35 days.

    • Nam-Kwang Cho
    • , Hyun-Jae Na
    •  & Youn Sang Kim

  • Article
    | Open Access

    MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge alignment with oxygen vacancies.

    • Roda Nur
    • , Takashi Tsuchiya
    •  & Mitsuru Takenaka

  • Article
    | Open Access

    Sensitive and scalable gas sensors are essential in daily life air-quality monitoring. Here, a monolithically integrated gas sensing circuit based on two-step-grown polycrystalline MoS2 films is fabricated, showing good switching and NO2 gas sensing response in a wide detection range of 1 to 256 ppm.

    • Sehwan Kim
    • , Heekyeong Park
    •  & Sunkook Kim

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