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The Möbius strip is a classic example of a topological structure. It can be made by taking a strip of paper, giving it a half twist and then joining the ends together to form a loop with only one side and one edge. Cutting lengthways along the centre destroys the Möbius strip, creating a loop that contains two twists and is twice as long as the original. Cutting lengthways along a line one-third of the width in from the edge creates a thinner Möbius strip interlocked with a longer loop that contains two twists. Now, researchers at Arizona State University have used DNA origami to assemble a nanoscale version of a Möbius strip and shown that it can be cut to form new structures as described above. The strips are ~210 nm long and contain 11 DNA double helices (shown in different colours in this illustration).
C60 was discovered in 1985 but it took five years to confirm that this famous molecule was spherical. Chris Toumey revisits a debate that highlighted different approaches to science.
Arrays of graphene nanoribbons are fabricated on structured silicon carbide substrates using self-organized growth, without lithography and with well-controlled widths.
Samples of graphene supported on boron nitride demonstrate superior electrical properties, achieving levels of performance that are comparable to those observed with suspended samples.
Patterning thin films of silicon to produce nanomesh structures can reduce their thermal conductivity without compromising their good electrical properties.
A wealth of physics can be explored by connecting two superconducting electrodes to a quantum dot. This article reviews the different electron-transport regimes observed in such devices and possible applications.
A Möbius strip — a ribbon-like structure with only one side — can be assembled from DNA origami and then reconfigured into various topologies by cutting along the length of the strip.
Graphene devices supported on single-crystal hexagonal boron nitride substrates show an enhanced mobility and carrier homogeneity, as well as reduced roughness, intrinsic doping and chemical reactivity, compared with traditional SiO2 substrates.
Graphene nanoribbons with a room-temperature bandgap have been grown on templated silicon carbide substrates at high density without the need for etching.
Optical rectification and electric-field enhancements in excess of 1,000 are observed when a subnanometre gap between gold electrodes is illuminated with infrared radiation.
A single electron can modulate the conductance of an InAs nanowire field-effect transistor by as much as 4,200% at 31 K, and has a charge sensitivity of 6 × 10−5e Hz−1/2 up to ∼200 K.
The capabilities of a new direct-printing method are demonstrated by fabricating nanowire field-effect transistors and arrays of pentacene thin-film transistors.