Letter abstract
Nature Materials 4, 42 - 46 (2004)
Published online: 19 December 2004 | doi:10.1038/nmat1284
Subject Categories: Electronic materials | Semiconductors | Optical, photonic and optoelectronic materials | Design synthesis and processing
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki1, Akira Ohtomo1, Takeyoshi Onuma2, Makoto Ohtani1, Takayuki Makino3, Masatomo Sumiya4, Keita Ohtani5, Shigefusa F. Chichibu2,3, Syunrou Fuke4, Yusaburou Segawa3, Hideo Ohno5, Hideomi Koinuma6,7 & Masashi Kawasaki1,7
Since the successful demonstration of a blue light-emitting diode (LED)1, potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow2, 3, 4. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation5, 6. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus7, 8, 9, 10, and even p–n junctions11, 12, 13. However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate14. If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors15. Here we report high-quality undoped films with electron mobility exceeding that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p–i–n junctions is demonstrated at room-temperature.
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
- Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), Sendai 980-0845, Japan
- Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
- Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- Combinatorial Material Science and Technology (COMET), Tsukuba 305-0044, Japan
Correspondence to: Masashi Kawasaki1,7 e-mail: kawasaki@imr.tohoku.ac.jp
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