Antiferromagnets have a variety of attractive features such as rapid operation, lack of stray fields, and insensitivity to external perturbations, that make an exciting prospect for memory and computing applications. Unfortunately, readout of the antiferromagnetic state is challenging. Here, Yan, Mao and coauthors demonstrate an antiferromagnet that can be switched between antiferromagnetic phases via piezoelectric strain with a large difference in the resistance between the two antiferromagnetic phases.
- Han Yan
- Hongye Mao
- Zhiqi Liu