Abstract
IT is a rather common occurrence that the resistance of semiconductor rectifiers drifts after application of a voltage. This effect is particularly strong immediately following the application of a voltage in the blocking direction. If the current decreases with time, one speaks of ‘forming’; if it increases, of ‘creep’. Forming and creep effects are particularly large in selenium rectifiers1. An explanation has been proposed2 based on the migration of ions in the barrier layer of the rectifier.
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References
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Lehovec, K., J. App. Phys., 20, 123 (1949).
Torrey, H. C., and Whitmer, C. A., “Crystal Rectifiers”, 100 (McGraw-Hill Book Co., New York, 1948).
Lehovec, K., Phys. Rev., 78, 348 (1950).
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LEHOVEC, K. Origin of a Time-lag Effect in Selenium Rectifiers. Nature 167, 522–523 (1951). https://doi.org/10.1038/167522b0
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DOI: https://doi.org/10.1038/167522b0
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