Abstract
Compact narrow-linewidth visible lasers are pivotal components for optical sensing, metrology and communications, as well as precision atomic and molecular spectroscopy. With an emission bandwidth approaching an octave, titanium-doped sapphire (Ti:Sa) lasers are key tools for producing solid-state lasing across visible and near-infrared bands; however, today’s commercial Ti:Sa laser systems require high pump power and rely on expensive tabletop components, which restrict them to laboratory settings. In this paper we present a photonic-circuit-integrated Ti:Sa laser that combines the Ti:Sa gain medium with a silicon-nitride-on-sapphire integrated photonics platform, resulting in high portability with minimal power consumption. We demonstrate Ti:Sa lasing from 730 nm to 830 nm by tightly confining the pump and lasing modes to a single microring resonator, reducing the lasing threshold by orders of magnitude down to 6.5 mW when compared with the free-space Ti:Sa lasers. Due to the low threshold, turn-key Ti:Sa laser operation is achieved by leveraging a commercially available indium gallium nitride pump diode. Our prototype photonic-circuit-integrated Ti:Sa laser opens a reliable pathway for broadband tunable lasers in the next generation of active–passive-integrated visible photonics.
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Data availability
The data that support the findings of this study are available at https://doi.org/10.5281/zenodo.7425191.
Code availability
All relevant computer codes supporting this study are available from the corresponding author on reasonable request.
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Acknowledgements
This work is supported by DARPA LUMOS under contract no. HR0011-20-2-0045. We thank X. Liu, A. Bruch, Z. Gong, J. Surya, J. Lu, F. Yang, C. Mi, J. Han and G. Keeler for fruitful discussions. We thank Y. Sun, S. Reinhart, K. Woods and M. Rooks for assistance with device fabrication. We thank J.-h. Kang, R. Elafandy and R. Cheng for their help in material characterization.
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H.X.T. and Y.W. conceived the experiment. Y.W. fabricated the device. Y.W. and J.A.H.-L., performed the experiment. Y.W. and J.A.H.-L. analysed the data. M.V. and Y.G. helped with the project. Y.W. and J.A.H.-L. wrote the manuscript, and all authors contributed to the manuscript. H.X.T. supervised the work.
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Nature Photonics thanks Arnan Mitchell, Huiyun Liu and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.
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Extended data
Extended Data Fig. 1 Device fabrication.
a. Process flow of the optimized photonic circuit integrated Ti:Sa laser process, including LPCVD SiN deposition, waveguide etch, Ti:Sa crystal bonding and SiON cladding deposition. b. Optical image of a fabricated device depicting the photonic waveguides.
Extended Data Fig. 2 Lasing linewidth measurement.
a. Schematics of the optical set-up for photonic circuit integrated Ti:Sa laser. Heterodyne beatnote measurement using commercial Ti:Sa laser (M2laser) allows measurement of laser linewidth using a fast photodetector (PD) and electrical signal analyser (ESA). b. Heterodyne beating signal between the on-chip Ti:Sa laser and the reference laser with a full-wave half maximum of 120 kHz.
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Wang, Y., Holguín-Lerma, J.A., Vezzoli, M. et al. Photonic-circuit-integrated titanium:sapphire laser. Nat. Photon. 17, 338–345 (2023). https://doi.org/10.1038/s41566-022-01144-2
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DOI: https://doi.org/10.1038/s41566-022-01144-2
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