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Epitaxial graphene quantum dots for high-performance terahertz bolometers

Abstract

Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron–phonon coupling1,2,3. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K−1 below 6 K), leading to responsivities of 1 × 1010 V W−1, a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (2 × 10−16 W Hz−1/2 at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K.

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Figure 1: Temperature dependence and electrical power characterization of graphene quantum dots.
Figure 2: Terahertz response of graphene dots.
Figure 3: Temperature dependence and effect of dot orientation with respect to the SiC steps.

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References

  1. Yan, J. et al. Dual-gated bilayer graphene hot-electron bolometer. Nature Nanotech. 7, 472–478 (2012).

    Article  CAS  Google Scholar 

  2. Han, Q. et al. Highly sensitive hot electron bolometer based on disordered graphene. Sci. Rep. 3, 3533 (2013).

    Article  Google Scholar 

  3. Cai, X. et al. Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene. Nature Nanotech. 9, 814–819 (2014).

    Article  CAS  Google Scholar 

  4. Tan, Y. W., Zhang, Y., Stormer, H. L. & Kim, P. Temperature dependent electron transport in graphene. Eur. Phys. J. Spec. Top. 148, 15–18 (2007).

    Article  Google Scholar 

  5. Bolotin, K. I., Sikes, K. J., Hone, J., Stormer, H. L. & Kim, P. Temperature-dependent transport in suspended graphene. Phys. Rev. Lett. 101, 096802 (2008).

    Article  CAS  Google Scholar 

  6. Morozov, S. V. et al. Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett. 100, 016602 (2008).

    Article  CAS  Google Scholar 

  7. Zhang, Y. B. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009).

    Article  CAS  Google Scholar 

  8. Yang, Y. F. et al. Low carrier density epitaxial graphene devices on SiC. Small 11, 90–95 (2015).

    Article  CAS  Google Scholar 

  9. Averin, D. V., Korotkov, A. N. & Likharev, K. K. Theory of single-electron charging of quantum-wells and dots. Phys. Rev. B 44, 6199–6211 (1991).

    Article  CAS  Google Scholar 

  10. Vicarelli, L. et al. Graphene field-effect transistors as room-temperature terahertz detectors. Nature Mater. 11, 865–871 (2012).

    Article  CAS  Google Scholar 

  11. Richards, P. L. Bolometers for infrared and millimeter waves. J. Appl. Phys. 76, 1–24 (1994).

    Article  CAS  Google Scholar 

  12. Karasik, B. S., McKitterick, C. B. & Prober, D. E. Prospective performance of graphene HEB for ultrasensitive detection of sub-mm radiation. J. Low Temp. Phys. 176, 249–254 (2014).

    Article  CAS  Google Scholar 

  13. Boppel, S., Lisauskas, A., Krozer, V. & Roskos, H. G. Performance and performance variations of sub-1 THz detectors fabricated with 0.15 μm CMOS foundry process. Electron. Lett. 47, 661–662 (2011).

    Article  Google Scholar 

  14. Karasik, B. S., Sergeev, A. V. & Prober, D. E. Nanobolometers for THz photon detection. IEEE Trans. Terahertz Sci. Technol. 1, 97–111 (2011).

    Article  CAS  Google Scholar 

  15. McKitterick, C. B., Prober, D. E., Vora, H. & Du, X. Ultrasensitive graphene far-infrared power detectors. J. Phys. Condens. Matter 27, 164203 (2015).

    Article  CAS  Google Scholar 

  16. Yakes, M. K. et al. Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions. Nano Lett. 10, 1559–1562 (2010).

    Article  CAS  Google Scholar 

  17. Ponomarenko, L. A. et al. Chaotic Dirac billiard in graphene quantum dots. Science 320, 356–358 (2008).

    Article  CAS  Google Scholar 

  18. Guttinger, J. et al. Transport through graphene quantum dots. Rep. Prog. Phys. 75, 126502 (2012).

    Article  CAS  Google Scholar 

  19. Droescher, S., Knowles, H., Meir, Y., Ensslin, K. & Ihn, T. Coulomb gap in graphene nanoribbons. Phys. Rev. B 84, 073405 (2011).

    Article  Google Scholar 

  20. Stampfer, C. et al. Energy gaps in etched graphene nanoribbons. Phys. Rev. Lett. 102, 056403 (2009).

    Article  CAS  Google Scholar 

  21. Rinzan, M., Jenkins, G., Drew, H. D., Shafranjuk, S. & Barbara, P. Carbon nanotube quantum dots as highly sensitive terahertz-cooled spectrometers. Nano Lett. 12, 3097–3100 (2012).

    Article  CAS  Google Scholar 

  22. Mendis, R. et al. Spectral characterization of broadband THz antennas by photoconductive mixing: toward optimal antenna design. IEEE Antenn. Wirel. Pr. 4, 85–88 (2005).

    Article  Google Scholar 

  23. Nyakiti, L. O. et al. Enabling graphene-based technologies: toward wafer-scale production of epitaxial graphene. MRS Bull. 37, 1149–1157 (2012).

    Article  CAS  Google Scholar 

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Acknowledgements

The work at Georgetown University was supported by the US Office of Naval Research (award no. N000141310865) and by the Air Force Office of Scientific Research (DURIP FA9550-09-1-0434). Work at NRL was supported by the US Office of Naval Research. A.K.B. is grateful for an American Association of Engineering Education post-doctoral fellowship and K.M.D. is a National Research Council Fellow. The devices were fabricated in the Georgetown Nanoscience and Microtechnology Laboratory. The authors thank H. D. Drew, A. B. Sushkov, T. E. Murphy, M. S. Fuhrer, Y. Yang and R. Elmquist for discussions.

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A.E.F. fabricated the devices and performed the transport measurements. A.K.B., K.M.D., R.L.M.-W. and D.K.G. synthesized and characterized the graphene on SiC. A.E.F. and P.B. designed the experiment and analysed the data. All authors contributed to the discussion of the results and preparation of the manuscript.

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Correspondence to Abdel El Fatimy or Paola Barbara.

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The authors declare no competing financial interests.

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El Fatimy, A., Myers-Ward, R., Boyd, A. et al. Epitaxial graphene quantum dots for high-performance terahertz bolometers. Nature Nanotech 11, 335–338 (2016). https://doi.org/10.1038/nnano.2015.303

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