Abstract
The photoelectrochemical splitting of water into hydrogen and oxygen requires a semiconductor to absorb light and generate electron–hole pairs, and a catalyst to enhance the kinetics of electron transfer between the semiconductor and solution. A crucial question is how this catalyst affects the band bending in the semiconductor, and, therefore, the photovoltage of the cell. We introduce a simple and inexpensive electrodeposition method to produce an efficient n-Si/SiOx/Co/CoOOH photoanode for the photoelectrochemical oxidation of water to oxygen. The photoanode functions as a solid-state, metal–insulator–semiconductor photovoltaic cell with spatially non-uniform barrier heights in series with a low overpotential water-splitting electrochemical cell. The barrier height is a function of the Co coverage; it increases from 0.74 eV for a thick, continuous film to 0.91 eV for a thin, inhomogeneous film that has not reached coalescence. The larger barrier height leads to a 360 mV photovoltage enhancement relative to a solid-state Schottky barrier.
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Acknowledgements
This material is based on work supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Grant No. DE-FG02-08ER46518.
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J.C.H. and A.T.L. prepared the samples and performed all measurements. J.C.H. and J.A.S. wrote the manuscript. J.A.S. directed the research.
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Hill, J., Landers, A. & Switzer, J. An electrodeposited inhomogeneous metal–insulator–semiconductor junction for efficient photoelectrochemical water oxidation. Nature Mater 14, 1150–1155 (2015). https://doi.org/10.1038/nmat4408
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DOI: https://doi.org/10.1038/nmat4408
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