Nature 410, 192–194 (2001).
Silicon light-emitting diodes (LED) show light emission at the bandgap energy of silicon with efficiencies approaching those of standard III–V emitters: 0.1% for planar devices (our Letter) and about 1% when total internal reflection is minimized by surface texturing1. We point out here an additional example of a silicon device also showing light emission at the bandgap2. The authors described devices made by the SACMOS-3 process and focus the bulk of the paper on visible emission under reverse bias. However, they also report briefly on a device operated under forward bias giving efficiencies of around 0.01%, although no explanation of the mechanism is given. It is now becoming clear that crystalline silicon, when appropriately engineered, is capable of supporting efficient light emission, opening up many significant applications.
References
Green, M. A., Shao, J., Wang, A., Reece, P. J. & Gal, M. Efficient silicon light-emitting diodes. Nature 412, 805–808 (2001).
Kramer, J. et al. Light-emitting devices in industrial CMOS technology. Sensors Actuators A37–A38, 527–533 (1993).
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Ng, W., Lourenço, M., Gwilliam, R. et al. addendum: An efficient room-temperature silicon-based light-emitting diode. Nature 414, 470 (2001). https://doi.org/10.1038/35106615
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DOI: https://doi.org/10.1038/35106615
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