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Diode lasers are electrically driven lasers generally made from semiconducting materials. In addition to the optical considerations common with all semiconductors, diode laser structures must also incorporate a means of injecting an electrical current into the active region. This often involves extra semiconductor layers and metal contacts.
The authors showcase an innovative anti-reflective vertical-cavity surface-emitting laser (AR-VCSEL) that achieves low divergence and maintains a single-mode lasing. The 6-junction AR-VCSEL array demonstrates low divergence from 8° to 16° (D86) and tripled brightness compared to conventional counterparts. The AR-VCSEL offers an excellent avenue for long-distance LiDARs.
We present a chip-scale second-harmonic source based on the self-injection-locking of a semiconductor laser to a high-Q silicon nitride microresonator. All-optical poling enables efficient frequency conversion with hertz-level emission linewidth.
Diode lasers represent a viable alternative to light sources used in many biomedical applications. Their ongoing development will further increase their importance, offering not only multiple wavelength ranges, but also higher power levels.
