Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain
the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in
Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles
and JavaScript.
Memory devices based on the spin-transfer-torque effect offer a range of attractive properties, such as speed of operation and low energy cost. This Progress Article outlines a strategy for assembling different nanodevices based on the spin-torque effect to achieve qualitatively different computing architectures.
