As the authors of references 25 and 26 also employed plasma-assisted molecular beam epitaxy for the synthesis of hexagonal boron nitride films, the authors would like to make the following changes to the Introduction section of their Article:
“In addition the direct growth of hBN on a two-dimensional material (HOPG) offers an alternative to chemical vapour deposition23,24,25,26 and atomic layer deposition27 of hBN on metal substrates; this approach must typically be complemented by complex protocols for the removal and transfer of the grown films”.
Should read:
“In addition the direct growth of hBN on a two-dimensional material (HOPG) offers an alternative to chemical vapour deposition23,24, MBE25,26 and atomic layer deposition27 of hBN on metal substrates; this approach must typically be complemented by complex protocols for the removal and transfer of the grown films”.
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The online version of the original article can be found at 10.1038/srep34474
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Cho, YJ., Summerfield, A., Davies, A. et al. Correction: Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Sci Rep 7, 46799 (2017). https://doi.org/10.1038/srep46799
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DOI: https://doi.org/10.1038/srep46799
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