In the original HTML version of this Article, all instances of the orientation [1–10] and [3–11] were incorrectly written as “1,2,3,4,5,6,7,8,9,10” and “3,4,5,6,7,8,9,10,11” respectively. In the original PDF version of this Article, all instances of the orientation [1–10] and [3–11] were given as “1–10” and “3–11” respectively. These errors have now been fixed in the HTML and PDF versions of this Article.
Additional information
The online version of the original article can be found at 10.1038/srep25328
Rights and permissions
This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
About this article
Cite this article
Renard, C., Molière, T., Cherkashin, N. et al. Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed. Sci Rep 6, 29875 (2016). https://doi.org/10.1038/srep29875
Published:
DOI: https://doi.org/10.1038/srep29875
Comments
By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.