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Ferroelectric growth

Bowing to ferroelectric artificial flux closure

Nature Materials volume 22, pages 1441–1443 (2023)Cite this article

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By inserting an epitaxial in-plane buffer layer of Bi5FeTi3O15, an artificial flux closure architecture enables ferroelectric polarization from a single unit cell of BaTiO3 or BiFeO3.

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Fig. 1: Artificial flux-closure architecture in ultrathin ferroelectric structures with in-plane polarized BFTO Aurivillius phase.

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Acknowledgements

This work was supported by Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory.

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  1. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA

    Neus Domingo

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  1. Neus Domingo
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Correspondence to Neus Domingo.

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Domingo, N. Bowing to ferroelectric artificial flux closure. Nat. Mater. 22, 1441–1443 (2023). https://doi.org/10.1038/s41563-023-01714-x

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