Abstract
Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications.
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The data from this study are available from the corresponding authors on reasonable request.
References
Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).
Li, M.-Y., Su, S.-K., Wong, H.-S. P. & Li, L.-J. How 2D semiconductors could extend Moore’s law. Nature 567, 169–170 (2019).
Hung, Y. H. et al. Scalable patterning of MoS2 nanoribbons by micromolding in capillaries. ACS Appl. Mater. Interfaces 8, 20993–21001 (2016).
Li, S. et al. Vapour–liquid–solid growth of monolayer MoS2 nanoribbons. Nat. Mater. 17, 535–542 (2018).
Chowdhury, T. et al. Substrate-directed synthesis of MoS2 nanocrystals with tunable dimensionality and optical properties. Nat. Nanotechnol. 15, 29–34 (2020).
Kong, W. et al. Polarity governs atomic interaction through two-dimensional materials. Nat. Mater. 17, 999–1004 (2018).
Chen, T. A. et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219–223 (2020).
Mu, W. et al. One-step exfoliation of ultra-smooth β-Ga2O3 wafers from bulk crystal for photodetectors. CrystEngComm 19, 5122–5127 (2017).
Schewski, R. et al. Step-flow growth in homoepitaxy of β-Ga2O3 (100)—the influence of the miscut direction and faceting. APL Mater. 7, 022515 (2019).
Pearton, S. J. et al. A review of Ga2O3 materials, processing, and devices. Appl. Phys. Rev. 5, 011301 (2018).
Åhman, J., Svensson, G. & Albertsson, J. A reinvestigation of β-gallium oxide. Acta Crystallogr. C 52, 1336–1338 (1996).
Li, M.-Y. et al. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 349, 524–528 (2015).
Hsu, W.-T. et al. Second harmonic generation from artificially stacked transition metal dichalcogenide twisted bilayers. ACS Nano 8, 2951–2958 (2014).
Kumar, N. et al. Second harmonic microscopy of monolayer MoS2. Phys. Rev. B 87, 161403 (2013).
van der Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 12, 554–561 (2013).
Zhang, X. et al. Defect-controlled nucleation and orientation of WSe2 on hBN: a route to single-crystal epitaxial monolayers. ACS Nano 13, 3341–3352 (2019).
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, I. V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).
Wang, Y. et al. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature 568, 70–74 (2019).
Amani, M. et al. Near-unity photoluminescence quantum yield in MoS2. Science 350, 1065–1068 (2015).
Lien, D.-H. et al. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. Science 364, 468–471 (2019).
Tongay, S. et al. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons. Sci. Rep. 3, 2657 (2013).
Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15–50 (1996).
Wimmer, E. et al. Computational materials engineering: recent applications of VASP in the MedeA software environment. J. Korean Ceram. Soc. 53, 263–272 (2016).
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 (1996).
Klimeš, J., Bowler, D. R. & Michaelides, A. Van der Waals density functionals applied to solids. Phys. Rev. B 83, 195131 (2011).
Acknowledgements
V.T. and J.-H.F. are indebted to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. V.T. acknowledges support from the KAUST Catalysis Center (KCC) and physical science division. C.P.C., T.-A.C., M.-Y.L. and L.-J.L. thank the Taiwan Semiconductor Manufacturing Company (TSMC). W.-H.C. acknowledges support from the Ministry of Science and Technology of Taiwan (MOST-108-2119-M-009-011-MY3, MOST-107-2112-M-009-024-MY3) and from the CEFMS of National Chiao Tung University supported by the Ministry of Education of Taiwan. V.T. and A.A. thank C.-H. Lien and L. Cavallo for their support; H.-L. Tang; M.-H. Chiu; and C.-C. Tseng for assistance with device architecture and CVD.
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A.A., L.-J.L. and V.T. conceived the project. A.A., J.-H.F., Y.W., M.H. and R.A. performed the synthesis of the TMD nanoribbons and heterostructures, and carried out the Raman, PL and AFM characterizations. C.-C.H., T.-A.C., M.-Y.L. and J.-H.F. fabricated the FETs and conducted the associated calculations. D.R.N., E.Y. and T.D.A. performed and analysed C-AFM and hyper PL spectra. S.B. synthesized and provided the single-crystal Cu (111) for hBN. S.-H.B. and J.K. transferred the 2D TMD and heterostructures. C.P.C. and Z.C. performed the first-principles calculations. A.A., S.L. and J.-H.F. performed the DF-STEM and cross-sectional HAADF-STEM. C.-J.L., W.-T.H. and W.-H.C. executed the SHG analysis. All of the authors discussed and contributed to the results. A.A., L.J.L. and V.T. wrote the paper.
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Aljarb, A., Fu, JH., Hsu, CC. et al. Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. Nat. Mater. 19, 1300–1306 (2020). https://doi.org/10.1038/s41563-020-0795-4
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DOI: https://doi.org/10.1038/s41563-020-0795-4
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