Abstract
Photosensitivity in cis-poly(phenylacetylene) (cis-PPA) films prepared with rare-earth coordination catalysts can be greatly improved by the irradiation with electron beams. Irradiation energy is a key factor for obtaining high photosensitivity. The potential discharge rate and difference between the initial and residual potential under an IR-lamp exposure increase with increasing energy from 1.3 to 1.8 MeV. Photosensitivity in cis-PPA remains almost constant if the irradiation flux is more than the critical flux (1×10 e cm−1). The irradiation effect for electron beams is strongly dependent on the microstructure of PPA and irradiation atmosphere. The dependence of the photosensitivity of the irradiated cis-PPA films on their storage time and temperature has been investigated. The characterization results of the irradiated cis-PPA have been described. A mechanism by which electron beams induce high photosensitivity in cis-PPA is proposed.
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Zhao, J., Yang, M. & Shen, Z. High Photosensitivity in Cis-Poly(phenylacetylene) Films Irradiated by Electron Beams. Polym J 23, 963–968 (1991). https://doi.org/10.1295/polymj.23.963
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DOI: https://doi.org/10.1295/polymj.23.963