Abstract
DURING the past ten years the development of semiconductors for the detection of gamma rays has been proceeding at an accelerating pace, so that lithium drifted silicon detectors, as well as lithium drifted germanium detectors and undrifted germanium detector materials, are now commercially available. These materials have two important shortcomings: first, they must be operated at liquid nitrogen temperatures if they are to give their best performance (although Si is useful up to +40° C); and second, silicon in particular has a low absorption cross section for gamma rays because of its low atomic weight. So the use of heavier compound semiconductors with larger energy gaps, in particular CdTe, has been of substantial interest in the development of solid state nuclear detectors1,2.
This is a preview of subscription content, access via your institution
Access options
Subscribe to this journal
We are sorry, but there is no personal subscription option available for your country.
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Dabbs, J. W. T., and Walter, F. J., Semiconductor Nuclear Particle Detectors (US National Academy of Sciences, Publication 871, Washington, DC, 1961).
Dearnaley, G., and Northrop, D. C., Semiconductor Counters for Nuclear Radiations (Spon, London, 1963).
Bertolini, G., and Cocher, A., Semiconductor Detectors (Wiley, New York, 1968).
Prince, M. B., and Polishuk, P., IEEE Trans. Nuclear Science, 14, 573 (1967).
Mayer, J. W., J. Appl. Phys., 38, 296 (1967).
Siffert, P., and Cornet, A., Proc. Internat. Symp. on Cadmium Telluride, A Material for Gamma-Ray Detectors (Centre de Recherches Nucleaires, Strasbourg, France, 1971).
Albers, W., in Phys. and Chem. of II-VI Compounds (edit. by Aven, M., and Prener, J. S.) (Wiley, New York, 1967).
Zanio, K., and Montano, H., Appl. Phys. Lett., 17, 49 (1970).
Zanio, K., Neeland, J., and Montano, H., IEEE Trans. Nuclear Science, NS 17, 287 (1970).
Kyle, N. R. J., Electrochem. Soc., 118, 1790 (1971).
de Nobel, D., Philips Research Reports, 14, 361 (1959).
de Nobel, D., Philips Research Reports, 14, 430 (1959).
Bell, R. O., and Wald, E., in Proc. Internat. Symp. on Cadmium Telluride, A Material for Gamma-Ray Detectors (edit. by Siffert, P., and Cornet, A.) (Centre de Recherches Nucleaires, Strasbourg, France, 1971).
Roth, W. L., in Phys. and Chem. of II-VI Compounds (edit. by Aven, M., and Prener, J. S.) (Wiley, New York, 1967).
Canali, C., Ottavian, G., Zanio, K. R., and Quaranta, A., Nuclear Inst. and Meth., 96, 561 (1971).
Ralph, H. I., and Hughes, F. O., Solid State Comm., 9, 1477 (1971).
Bell, R. O., Hemmat, N., and Wald, E., Phys. Stat. Sol. (a), 1, 375 (1970).
Strauss, A. J., in Proc. Internat. Symp. on Cadmium Telluride, A Material for Gamma-Ray Detectors (edit. by Siffert, P., and Cornet, A.) (Centre de Recherches Nucleaires, Strasbourg, France, 1971).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
WALD, F., BELL, R. Halogen-doped Cadmium Telluride for Detection of Gamma Rays. Nature Physical Science 237, 13–15 (1972). https://doi.org/10.1038/physci237013a0
Received:
Issue Date:
DOI: https://doi.org/10.1038/physci237013a0
This article is cited by
-
Preparation of cadmium telluride single crystals for nuclear detectors
Czechoslovak Journal of Physics (1975)
-
Photoresponse of high resistivity cadmium telluride between room temperature and 400°C
Journal of Electronic Materials (1974)