The experimental demonstration of antiferromagnetic tunnelling anisotropic magnetoresistance paves the way for spintronic devices based on antiferromagnets, rather than ferromagnets.
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Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
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References
Grünberg, P., Schreiber, R., Pang, Y., Brodsky, M. B. & Sowers, H. Phys. Rev. Lett. 57, 2442–2245 (1986).
Baibich, M. N. et al. Phys. Rev. Lett. 61, 2472–2475 (1988).
Park, B. G. Nature Mater. 10, 347–351 (2011).
Slonczewski, J. C. J. Magn. Magn. Mater. 159, L1–L7 (1996).
Berger, L. Phys. Rev. B 54, 9353–9358 (1996).
Nunez, A. S., Duine, R. A., Haney, P. M. & MacDonald, A. H. Phys. Rev. B 73, 214426 (2006).
Wei, Z. et al. Phys. Rev. Lett. 98, 116603 (2007).
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Duine, R. An alternating alternative. Nature Mater 10, 344–345 (2011). https://doi.org/10.1038/nmat3015
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DOI: https://doi.org/10.1038/nmat3015
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