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Oxide electronics

Transistors pick up steam

Nature Materials volume 10, pages 9–10 (2011)Cite this article

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High annealing temperatures have limited the technological potential of solution-processed metal oxide semiconductors. It is now shown that high-quality films can be formed below 250 °C using precursors that are hydrolysed on-chip.

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Figure 1: An ideal thin-film transistor.
Figure 2: The electrical characteristics of an unstable TFT.

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  1. Douglas Keszler is in the Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, Oregon 97331-4003, USA. douglas.keszler@oregonstate.edu,

    Douglas Keszler

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  1. Douglas Keszler
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Keszler, D. Transistors pick up steam. Nature Mater 10, 9–10 (2011). https://doi.org/10.1038/nmat2932

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