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Origin of the energy bandgap in epitaxial graphene

Nature Materials volume 7, pages 259–260 (2008)Cite this article

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We show here that the argument presented by Rotenberg et al. in the preceding comment to account for the energy gap reported by us1 in epitaxial graphene on 6H-SiC is unfounded. In our view, the effects of modulations on the lateral structure of graphene films alone cannot account for the large gap observed in films with single-layer graphene terraces exceeding 150 nm in size.

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Figure 1: Direct correlation of graphene terrace sizes measured by LEEM and gaps measured by ARPES shows that quantum confinement is not the main mechanism for the gap opening.

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Acknowledgements

We would like to thank K.F. McCarty for experimental assistance with the LEEM experiments.

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Authors and Affiliations

  1. Department of Physics, University of California, Berkeley, 94720, California, USA

    S.Y. Zhou, D.A. Siegel, D.-H. Lee & A. Lanzara

  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, 94720, California, USA

    S.Y. Zhou, D.A. Siegel, F.El Gabaly, A.K. Schmid, D.-H. Lee & A. Lanzara

  3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, 94720, California, USA

    A.V. Fedorov

  4. Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, 02215, Massachusetts, USA

    A.H. Castro Neto

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  1. S.Y. Zhou
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Correspondence to A. Lanzara.

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Zhou, S., Siegel, D., Fedorov, A. et al. Origin of the energy bandgap in epitaxial graphene. Nature Mater 7, 259–260 (2008). https://doi.org/10.1038/nmat2154b

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