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Thin films of hard cubic Zr3N4 stabilized by stress

Nature Materials volume 4, pages 317–322 (2005)Cite this article

Abstract

Hard, refractory thin films consisting of group IVB element mono-nitrides deposited using various chemical and physical vapour-deposition techniques are widely used in wear-resistant applications. As the demand for performance exceeds the capabilities of existing materials, new materials with superior properties must be developed. Here we report the realization and characterization of hard cubic Zr3N4 (c-Zr3N4) thin films. The films, deposited using a novel but industrially viable modified filtered cathodic arc (FCA) method, undergo a phase transformation from orthorhombic to cubic above a critical stress level of 9 GPa as determined by X-ray diffraction and Raman spectroscopy. The c-Zr3N4 films are significantly harder (∼36 GPa) than both the orthorhombic Zr3N4 (o-Zr3N4) and ZrN films (∼27 GPa). The ability to deposit this material directly onto components as a thin film will allow its use in wear- and oxidation-resistant applications.

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Figure 1: Mass spectrum and ion-energy distribution (inset) of Zr-N plasma produced by the modified filtered cathodic arc.
Figure 2: Crystal structures, XRD, TEM, Raman and UV-VIS spectroscopy data for various Zr-N thin films investigated in this study.
Figure 3: Variation of hardness and stress versus ion energy and the dependence of hardness on the stress.
Figure 4: Milling test results from uncoated, TiN and c-Zr3N4-coated three flute end mills with a diameter of 8 mm.

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Acknowledgements

The authors would like to thank Rob Aharonov of Ion Bond (Madison Height, Michigan) for providing the modified FCA cathode assembly as well as advice and support for the project.

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  1. Rutgers University, Ceramic and Materials Engineering, Piscataway, 08854, New Jersey, USA

    Manish Chhowalla & H. Emrah Unalan

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  1. Manish Chhowalla
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Correspondence to Manish Chhowalla.

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Chhowalla, M., Unalan, H. Thin films of hard cubic Zr3N4 stabilized by stress. Nature Mater 4, 317–322 (2005). https://doi.org/10.1038/nmat1338

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