Abstract
Amorphous silicon is a semiconductor with a lower density than the metallic silicon liquid. It is widely believed that the amorphous–liquid transition is a first-order melting transition. In contrast to this, recent computer simulations and the experimental observation of pressure-induced amorphization of nanoporous silicon have revived the idea of an underlying liquid–liquid phase transition implying the existence of a low-density liquid and its glass transition to the amorphous solid. Here we demonstrate that during irradiation with high-energy heavy ions amorphous silicon deforms plastically in the same way as conventional glasses. This behaviour provides experimental evidence for the existence of the low-density liquid. The glass transition temperature for a timescale of 10 picoseconds is estimated to be about 1,000 K. Our results support the idea of liquid polymorphism as a general phenomenon in tetrahedral networks.
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Acknowledgements
We thank H. Trinkaus, E. Wendler and A. Kamarou for discussions and U. Kaiser, H. Hobert and C. Voigt for their contributions to the analysis of the samples.
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Hedler, A., Klaumünzer, S. & Wesch, W. Amorphous silicon exhibits a glass transition. Nature Mater 3, 804–809 (2004). https://doi.org/10.1038/nmat1241
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DOI: https://doi.org/10.1038/nmat1241
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