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Ferroelectrics

Pushing towards the digital storage limit

Nature Materials volume 3, pages 81–82 (2004)Cite this article

Ferroelectric materials promise computer memories with the speed of random access memories and the permanence of hard discs. But how will the microstructure of these materials influence the ultimate performance of ferroelectric memories?

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Figure 1: Cross-sectional sketch of different nanosized ferroelectric grains.

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Authors and Affiliations

  1. Department IFF, Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich, Jülich, D-52425, Germany

    Rainer Waser & Andreas Rüdiger

  2. Rainer Waser & Andreas Rüdiger

  3. Institute of Materials in Electrical Engineering and Information Technology 2 (IWE2), RWTH Aachen University, Aachen, D-52056, Germany

    Rainer Waser

Authors
  1. Rainer Waser
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  2. Andreas Rüdiger
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Waser, R., Rüdiger, A. Pushing towards the digital storage limit. Nature Mater 3, 81–82 (2004). https://doi.org/10.1038/nmat1067

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