Using carbon-based graphene, researchers have designed a transistor that outsmarts its silicon-based counterparts1.
In graphene, carbon atoms are arranged in a one-atom-thick sheet in honeycomb lattice. Its structure is related to carbon nanotubes, which is another carbon-based material studied for use in future generations of electronics. Graphene is gaining popularity because it can transport electrons quickly. This quality is essential for fast switching speeds in electronics.
For the study, the researchers injected two types (p- and n- type) of carrier injections in a bilayer graphene by varying voltage.
The new transistor showed a value of about 125 times higher than the conventional silicon dioxide capacitance. Unlike the single-layer graphene, the drain-source current did not saturate on changing the drain-source bias voltage. It also performed better than single-layer graphene.
The findings of this research are significant as graphene-based transistors can run at speeds a hundred to a thousand times faster than silicon transistors.
