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Volume 5 Issue 10, October 2013

Research Highlight

  • Although materials having both excellent optical transparency and electrical conductivity at first seem counterintuitive, such substances are essential to a myriad of modern technologies. Applications for transparent conductors include electrodes for LCD, OLED and other displays, touch screens, electromagnetic interference shielding, transparent heaters (for example, automotive windshields), and photovoltaic cells.1 For many applications, mechanical flexibility, as on plastic substrates, is also desirable for versatile form factors, impact resistance, roll-to-roll manufacture, product functionality and light weight. For many applications, the oxides of heavy post-transition metals, such as tin-doped indium oxide (ITO) or, to a lesser extent, related oxides, have traditionally served this purpose.1 However, the cost of ITO is sensitive to fluctuating indium prices, electrical conductivity is not optimum, ITO is corroded in many environments, polycrystalline ITO coatings on plastic are brittle and less conductive, and ITO films are grown by capital-intensive sputtering processes.1 A key issue in vapor-phase coating processes is the percentage of material actually transferred to the substrate, and for ITO this process has been heavily optimized for high yields.

    • Tobin J Marks
    Research Highlight Open Access

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Original Article

  • Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces by field effect drew significant attention to the development oxide-based electronics. Increase in the gate capacitance of LaAlO3/SrTiO3-based field-effect transistor is particularly important to the conductivity modulation and the development of logic device. Here, we demonstrate that annihilation of quantum capacitance and colossal capacitance enhancement (about 1000%) in the LaAlO3/SrTiO3 heterostructures by DC gate voltage at room temperature, which we attribute to the motion of oxygen vacancies through the LaAlO3 layer thickness. The capacitor devices would provide a platform for the further development and application of metal-oxide-semiconductor transistor devices.

    • Shuxiang Wu
    • Guangheng Wu
    • Shuwei Li
    Original Article Open Access
  • We demonstrate a LEGO-like assembly of free-standing film of individually operable components encapsulated in a polymer overcoat layer, leading to the integrated architecture without additional electrical connection. The free-standing components are produced by the peeling-off process. The sticky nature of polymer layer enables the construction of supercapacitor arrays and simple RLC circuits through interlocking the individual components.

    • Sangkyu Lee
    • Jaehwan Ha
    • Ungyu Paik
    Original Article Open Access
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Review

  • Metal chalcogenide quantum dots (QDs) and lead halide perovskites are two types of prospective light harvesters for mesoscopic solar cells. The two most promising QD sensitizers are PbS and Sb2S3, for which the PCEs of their corresponding QDSCs have attained 7% in 2012. In 2013, the performance of a TiO2 solar cell sensitized with lead-iodide perovskite (CH3NH3PbI3) was optimized to attain an overall power conversion efficiency of 15%, which is a new milestone for solar cells of this type, with a device structure similar to that of a dye-sensitized solar cell.

    • Jae Hui Rhee
    • Chih-Chun Chung
    • Eric Wei-Guang Diau
    Review Open Access
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