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Letter |
Berry curvature memory through electrically driven stacking transitions
A memory device is proposed that uses a dynamical modification of the stacking order of few-layer WTe2 to encode information. The change in stacking modifies both the Berry curvature and the Hall transport, allowing two states to be distinguished.
- Jun Xiao
- , Ying Wang
- & Aaron M. Lindenberg
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Letter |
Three-stage decoherence dynamics of an electron spin qubit in an optically active quantum dot
The mechanisms of decoherence in solid-state spin qubits subject to low magnetic fields turn out to be more complex than previously expected as an additional fast relaxation stage has now been identified.
- Alexander Bechtold
- , Dominik Rauch
- & Jonathan J. Finley
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