Article abstract
Nature Physics 3, 265 - 269 (2007)
Published online: 11 February 2007 | doi:10.1038/nphys537
Subject Categories: Condensed-matter physics | Electronics, photonics and device physics
Effects of disorder on electron spin dynamics in a semiconductor quantum well
Zhigang Chen1,2, Sam G. Carter1, Rudolf Bratschitsch1, Philip Dawson3 & Steven T. Cundiff1
Abstract
Using the spin of the electron to carry information, instead of or in addition to its charge, could provide advances in the capabilities of microelectronics. Successful implementation of spin-based electronics requires preservation of the electron spin coherence. In n-doped semiconductors, long spin-coherence times have been observed, with a maximum at a 'magic' electron density. Here, we vary the density in a two-dimensional electron gas, and show that spin coherence is lost because of the interplay between localization by disorder and dynamical scattering. By measuring the electron Landé g-factor dependence on density, we determine the density of states (DOS), which characterizes the disorder potential. Using our knowledge of the DOS, a simple model estimates the temperature and excitation intensity dependence of the g factor, qualitatively agreeing with experiments. This agreement confirms the importance of disorder and provides predictive power for designing spin-based electronic devices.
- JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440, USA
- Department of Physics, University of Colorado, Boulder, Colorado 80309-0390, USA
- School of Physics and Astronomy, University of Manchester, Manchester, M60 1QD, UK
Correspondence to: Rudolf Bratschitsch1 Current address: Fachbereich Physik, Universität Konstanz, D-78457 Konstanz, Germany
Correspondence to: Steven T. Cundiff1 e-mail: cundiffs@jila.colorado.edu
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