Letter abstract
Nature Photonics 2, 170 - 174 (2008)
Published online: 24 February 2008 | doi:10.1038/nphoton.2008.4
Subject Categories: Lasers, LEDs and light sources | Nonlinear optics | Novel materials and engineered structures
A cascaded silicon Raman laser
Haisheng Rong1, Shengbo Xu1, Oded Cohen2, Omri Raday2, Mindy Lee1, Vanessa Sih1 & Mario Paniccia1
Abstract
One of the major advantages of Raman lasers is their ability to generate coherent light in wavelength regions that are not easily accessible with other conventional types of lasers1. Recently, efficient Raman lasing in silicon in the near-infrared region has been demonstrated2, 3, 4, showing great potential for realizing low-cost, compact, room-temperature lasers in the mid-infrared region5, 6, 7. Such lasers are highly desirable for many applications, ranging from trace-gas sensing, environmental monitoring and biomedical analysis, to industrial process control, and free-space communications8, 9. Here we report the first experimental demonstration of cascaded Raman lasing in silicon, opening the path to extending the lasing wavelength from the near- to mid-infrared region. Using a 1,550-nm pump source, we achieve stable, continuous-wave, second-order cascaded lasing at 1,848 nm with an output power exceeding 5 mW. The laser operates in single mode, and the laser linewidth is measured to be <2.5 MHz.
- Intel, 2200 Mission College Boulevard, SC12-326, Santa Clara, California 95054, USA
- Intel, S.B.I. Park Har Hotzvim, Jerusalem 91031, Israel
Correspondence to: Haisheng Rong1 e-mail: haisheng.rong@intel.com
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