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Spin Hall effect clocking of nanomagnetic logic without a magnetic field

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Abstract

Spin-based computing schemes could enable new functionalities beyond those of charge-based approaches1,2,3,4,5,6. Examples include nanomagnetic logic, where information can be processed using dipole coupled nanomagnets7,8,9,10,11,12,13,14, as demonstrated by multi-bit computing gates8,13. One fundamental benefit of using magnets is the possibility of a significant reduction in the energy per bit compared with conventional transistors1,8,14,15. However, so far, practical implementations of nanomagnetic logic have been limited by the necessity to apply a magnetic field for clocking8,11. Although the energy associated with magnetic switching itself could be very small, the energy necessary to generate the magnetic field renders the overall logic scheme uncompetitive when compared with complementary metal–oxide–semiconductor (CMOS) counterparts. Here, we demonstrate a nanomagnetic logic scheme at room temperature where the necessity for using a magnetic field clock can be completely removed by using spin–orbit torques16,17,18,19,20,21,22. We construct a chain of three perpendicularly polarized CoFeB nanomagnets on top of a tantalum wire and show that an unpolarized current flowing through the wire can ‘clock’ the perpendicular magnetization to a metastable state. An input magnet can then drive the nanomagnetic chain deterministically to one of two dipole-coupled states, ‘2 up 1 down’ or ‘2 down 1 up’, depending on its own polarization. Thus, information can flow along the chain, dictated by the input magnet and clocked solely by a charge current in tantalum, without any magnetic field. A three to four order of magnitude reduction in energy dissipation is expected for our scheme when compared with state-of-the-art nanomagnetic logic.

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Figure 1: Spin Hall effect spin-torque-based clocking.
Figure 2: Driving a perpendicularly polarized magnet to a metastable in-plane state by spin Hall effect spin torque.
Figure 3: Dipole coupling between adjacent magnetic dots.
Figure 4: Information propagation along a chain of magnetic dots.

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References

  1. Salahuddin, S. & Datta, S. Interacting systems for self-correcting low power switching. Appl. Phys. Lett. 90, 093503 (2007).

    Article  Google Scholar 

  2. Behin-Aein, B., Datta, D., Salahuddin, S. & Datta, S. Proposal for an all-spin logic device with built-in memory. Nature Nanotech. 5, 266–270 (2010).

    Article  CAS  Google Scholar 

  3. Bandyopadhyay, S. & Cahay, M. Introduction to Spintronics (CRC, 2008).

    Book  Google Scholar 

  4. Nikonov, D. E., Bourianoff G. I. & Ghani, T. Proposal of a spin torque majority gate logic. IEEE Electron. Dev. Lett. 32, 1128–1130 (2011).

    Article  Google Scholar 

  5. Ikeda, S. et al. Magnetic tunnel junctions for spintronic memories and beyond. IEEE Trans. Electron. Dev. 54, 991–1002 (2007).

    Article  CAS  Google Scholar 

  6. Ohno, H., Endoh, T., Hanyu, T., Naoki, K. & Ikeda, S. Magnetic tunnel junction for nonvolatile CMOS logic. IEEE IEDM Tech. Digest 2010, 218–221 (2010).

    Google Scholar 

  7. Cowburn, R. P. & Welland, M. E. Room temperature magnetic quantum cellular automata. Science 287, 1466–1468 (2000).

    Article  CAS  Google Scholar 

  8. Imre, A. et al. Majority logic gate for magnetic quantum-dot cellular automata. Science 311, 205–208 (2006).

    Article  CAS  Google Scholar 

  9. Atulasimha, J. & Bandyopadhyay, S. Bennett clocking of nanomagnetic logic using multiferroic single-domain nanomagnets. Appl. Phys. Lett. 97, 173105 (2010).

    Article  Google Scholar 

  10. Carlton, D. B., Emley, N. C., Tuchfeld, E. & Bokor, J. Simulation studies of nanomagnet-based logic architecture. Nano Lett. 8, 4173–4178 (2008).

    Article  CAS  Google Scholar 

  11. Alam, M. T. et al. On-chip clocking of nanomagnetic logic lines and gates. IEEE Trans. Nanotechnol. 11, 273–286 (2012).

    Article  Google Scholar 

  12. Ju, X. et al. Nanomagnetic logic from partially irradiated Co/Pt nanomagnets. IEEE Trans. Nanotechnol. 11, 97–104 (2012).

    Article  Google Scholar 

  13. Breitkreutz, S. et al. Majority gate for nanomagnetic logic with perpendicular magnetic anisotropy. IEEE Trans. Magn. 48, 4336–4339 (2012).

    Article  CAS  Google Scholar 

  14. Lambson, B., Carlton, D. & Bokor, J. Exploring the thermodynamic limits of computation in intergrated systems: magnetic memory, nanomagnetic logic, and the Landauer limit. Phys. Rev. Lett. 107, 010604 (2011).

    Article  Google Scholar 

  15. Roy, K., Bandyopadhyay, S. & Atulasimha, J. Hybrid spintronics and straintronics: a magnetic technology for ultra low power energy computing and signal processing. Appl. Phys. Lett. 99, 063108 (2011).

    Article  Google Scholar 

  16. Liu, L. et al. Spin–torque switching with the giant spin Hall effect of tantalum. Science 336, 555–558 (2012).

    Article  CAS  Google Scholar 

  17. Liu, L., Lee, O. J., Gudmundsen, T. J., Ralph, D. C. & Buhrman, R. A. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. Phys. Rev. Lett. 109, 096602 (2012).

    Article  Google Scholar 

  18. Haazen, P. P. J. et al. Domain wall depinning governed by the spin Hall effect. Nature Mater. 12, 299–303 (2013).

    Article  CAS  Google Scholar 

  19. Miron, I. M. et al. Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer. Nature Mater. 9, 230–234 (2010).

    Article  Google Scholar 

  20. Miron, I. M. et al. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature 476, 189–193 (2011).

    Article  CAS  Google Scholar 

  21. Suzuki, T. et al. Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire. Appl. Phys. Lett. 98, 142505 (2011).

    Article  Google Scholar 

  22. Kim, J. et al. Layer thickness dependence of the current induced effective field vector in Ta/CoFeB/MgO. Nature Mater. 12, 240–245 (2013).

    Article  CAS  Google Scholar 

  23. Hirsch, J. E. Spin Hall effect. Phys. Rev. Lett. 83, 1834–1837 (1999).

    Article  CAS  Google Scholar 

  24. Ikeda, S. et al. A perpendicular anisotropy CoFeB–MgO magnetic tunnel junction. Nature Mater. 9, 721–724 (2010).

    Article  CAS  Google Scholar 

  25. Bhowmik, D., You, L. & Salahuddin, S. Possible route to low current, high speed, dynamic switching in a perpendicular anisotropy CoFeB–MgO junction using spin Hall effect of Ta. IEEE IEDM Tech. Digest 2012, 29.7.1–29.7.4 (2012).

    Google Scholar 

  26. Nagaosa, N., Sinova, J., Onoda, S., MacDonald, A. H. & Ong, N. P. Anomalous Hall effect. Rev. Mod. Phys. 82, 1539–1592 (2010).

    Article  Google Scholar 

  27. Alexandrou, M. et al. Spatial sensitivity mapping of Hall crosses using patterned magnetic nanostructures. J. Appl. Phys. 108, 043920 (2010).

    Article  Google Scholar 

  28. Carlton, D. B. et al. Investigation of defects and errors in nanomagnetic logic circuits. IEEE Trans. Nanotechnol. 11, 760–762 (2012).

    Article  Google Scholar 

  29. Nikonov, D. E. & Young, I. Overview of beyond-CMOS devices and a uniform methodology for their benchmarking. Proc. IEEE http://dx.doi.org/10.1109/JPROC.2013.2252317 (2013).

  30. Niimi, Y. et. al. Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys. Phys. Rev. Lett. 109, 156602 (2012).

    Article  CAS  Google Scholar 

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Acknowledgements

The authors thank E. Chen and X. Tang of Grandis Corporation for help with material preparation, and D. Nikonov and J. Bokor for valuable discussions. This work was supported in part by the Defense Advance Research Projects Agency Non-Volatile Logic Program, the National Science Foundation Center for Energy Efficient Electronics Science Centre at Berkeley, and the Semiconductor Research Corporation Western Institute of Nanoelectronics centre.

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L.Y. fabricated the devices. D.B. and L.Y. performed measurements. S.S. conceived and supervised the overall project. All authors discussed and analysed data and participated in writing the manuscript.

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Correspondence to Sayeef Salahuddin.

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The authors declare no competing financial interests.

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Bhowmik, D., You, L. & Salahuddin, S. Spin Hall effect clocking of nanomagnetic logic without a magnetic field. Nature Nanotech 9, 59–63 (2014). https://doi.org/10.1038/nnano.2013.241

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