Article abstract
Nature Nanotechnology 4, 50 - 55 (2009)
Published online: 30 November 2008 | doi:10.1038/nnano.2008.359
Subject Categories: Electronic properties and devices | Nanomaterials | Synthesis and processing
Controlled polytypic and twin-plane superlattices in iii–v nanowires
P. Caroff1,2, K. A. Dick1,2, J. Johansson1, M. E. Messing1, K. Deppert1 & L. Samuelson1
Abstract
Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour.
- The Nanometer Structure Consortium/Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
- These authors contributed equally to this work
Correspondence to: P. Caroff1,2 e-mail: Philippe.Caroff@iemn.univ-lille1.fr
Correspondence to: K. A. Dick1,2 e-mail: Kimberly.Dick@ftf.lth.se
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