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Letter
Nature Nanotechnology 3, 402–407 (1 July 2008) | doi:10.1038/nnano.2008.161
Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch|[minus]|2 density
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Abstract
Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal|[sol]|ferroelectric|[sol]|metal nanocapacitors with a density of 176|[nbsp]|Gb|[nbsp]|inch|[minus]|2. The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650|[nbsp]||[deg]|C, which results in excellent ferroelectric properties.
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