Letter abstract
Nature Nanotechnology 3, 97 - 100 (2008)
Published online: 3 February 2008 | doi:10.1038/nnano.2008.1
Subject Categories: Electronic properties and devices | Nanomagnetism and spintronics
An all-metallic logic gate based on current-driven domain wall motion
Peng Xu1, Ke Xia1, Changzhi Gu1, Ling Tang1, Haifang Yang1 & Junjie Li1
Abstract
The walls of magnetic domains can become trapped in a ferromagnetic metallic point contact when the thickness of the film and the width of the contact are less than their critical values1. The discovery that domain walls can be moved from such constrictions by a sufficiently large current has attracted considerable attention from researchers working on both fundamental research and potential applications2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12. Here we show that Invar nanocontacts fabricated on silica substrates exhibit a sharp drop in resistance with increasing bias voltage at room temperature in the absence of an applied magnetic field. Moreover, when two nanocontacts are combined in an all-metallic comparison circuit, it is possible to perform logical NOT operations. The use of electrical currents rather than applied magnetic fields to control the domain walls also reduces energy consumption and the risk of crosstalk in devices13, 14.
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Correspondence to: Ke Xia1Changzhi Gu1 e-mail: czgu@aphy.iphy.ac.cn
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