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Nature Materials 8, 171 - 172 (2009)
doi:10.1038/nmat2392
Epitaxial graphene: How silicon leaves the scene
Peter Sutter1
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Peter Sutter is at the Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
e-mail: psutter@bnl.gov
Abstract
Large and homogeneous layers of graphene are obtained by annealing silicon carbide in a dense noble gas atmosphere that controls the way in which silicon sublimates. Epitaxial graphene thus gets back on track towards future electronic applications.
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The large-scale production of high-quality graphene layers is one of the main challenges to be overcome for successful application of this material. Epitaxial growth on ruthenium substrate produces homogeneous domains of single- and double-layer graphene on the scale of several tens of micrometres. The electronic properties of the second layer show great potential for applications. The large-scale production of high-quality graphene layers is one of the main challenges to be overcome for successful application of this material. Epitaxial growth on ruthenium substrate produces homogeneous domains of single- and double-layer graphene on the scale of several tens of micrometres. The electronic properties of the second layer show great potential for applications.Nature Materials Article (01 May 2008)
Supplementary InformationNature Materials Letter (01 Mar 2009)
