With silicon microelectronics approaching fundamental limits, new concepts for high-density memory devices are sought. The individual switching of dislocations in oxides may offer just the right alternative.
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Kingon, A. Is the ultimate memory in sight?. Nature Mater 5, 251–252 (2006). https://doi.org/10.1038/nmat1623
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DOI: https://doi.org/10.1038/nmat1623
