Impurities that increase the number of electron carriers are essential in most bulk semiconductors. Introducing such foreign atoms into semiconductor nanocrystals is fiddly, and requires exact knowledge of the material's surface.
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References
Erwin, S. C. et al. Nature 436, 91–94 (2005).
Rossetti, R. & Brus, L. J. Phys. Chem. 86, 172–177 (1982).
Efros, Al. L. Fiz. Tekh. Poluprovodn. 16, 1209–1214 (1982); Sov. Phys. Semicond. 16, 772–775 (1982).
Feynman, R. http://www.zyvex.com/nanotech/feynman.html
Yu, D., Philippe, W. & Guyot-Sionnest, P. Science 300, 1277–1280 (2003).
Raola, O. E. & Strouse, G. F. Nano Lett. 2, 1443–1447 (2002).
Puzder, A. et al. Nano Lett. 4, 2361–2365 (2004).
Huang, F. & Banfield, J. F. J. Am. Chem. Soc. 127, 4523–4529 (2005).
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Galli, G. Doping the undopable. Nature 436, 32–33 (2005). https://doi.org/10.1038/436032a
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DOI: https://doi.org/10.1038/436032a
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