Letters to Nature

Nature 432, 488-492 (25 November 2004) | doi:10.1038/nature03090; Received 4 July 2004; Accepted 5 October 2004

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura1, Hiromichi Ohta1, Akihiro Takagi2, Toshio Kamiya1,2, Masahiro Hirano1 & Hideo Hosono1,2,3

  1. ERATO-SORST, JST, in Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
  2. Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
  3. Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan

Correspondence to: Hideo Hosono1,2,3 Email: hosono@msl.titech.ac.jp

Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2, 3, 4, 5 and organic semiconductors2, 6, 7, 8, 9, 10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

MORE ARTICLES LIKE THIS

These links to content published by NPG are automatically generated.

REVIEWS

Nanoelectronics from the bottom up

Nature Materials Review (01 Nov 2007)

See all 2 matches for Reviews

NEWS AND VIEWS

Printed electronics Nanotube inks make their mark

Nature Nanotechnology News and Views (01 Mar 2009)

Doping amorphous silicon

Nature News and Views (07 Oct 1976)

See all 6 matches for News And Views