An atomic force microscope has been used to create nanoscale field-effect transistors and other electronic devices at the interface between two different oxide materials.
This is a preview of subscription content, access via your institution
Relevant articles
Open Access articles citing this article.
-
Electrically induced colossal capacitance enhancement in LaAlO3/SrTiO3 heterostructures
NPG Asia Materials Open Access 04 October 2013
Access options
Subscribe to this journal
Receive 12 print issues and online access
$259.00 per year
only $21.58 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Cen, C., Thiel, S. Mannhart, J. & Levy, J. Science 323, 1026–1030 (2009).
Ohtomo, A. & Hwang, H. Y. Nature 427, 423–426 (2004).
Rijnders, G., Koster, G., Blank, D. H. A. & Rogalla, H. Appl. Phys. Lett. 70, 1888–1890 (1997).
Thiel, S., Hammerl, G., Schmehl, A., Schneider, C. & Mannhart, J. Science 313, 1942–1945 (2006).
Huijben, M. et al. Nature Mater. 5, 556–560 (2006).
Cen, C., Thiel, S., Mannhart, J. & Levy, J. Nature Mater. 7, 298–302 (2008).
Eigler, D. M. & Schweizer, E. K. Nature 344, 524–526 (1990).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Blank, D., Rijnders, G. Oxides offer the write stuff. Nature Nanotech 4, 279–280 (2009). https://doi.org/10.1038/nnano.2009.103
Issue Date:
DOI: https://doi.org/10.1038/nnano.2009.103
This article is cited by
-
Electrically induced colossal capacitance enhancement in LaAlO3/SrTiO3 heterostructures
NPG Asia Materials (2013)