Future high-speed communications devices will require efficient long-wavelength emitters that are compatible with integrated circuits. The development of a 1.5 μm GaAs LED is an important step forward.
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References
Pan, J.L. et al. Nature Mater. 2, 375–378 ( 2003).
Melloch, M.R. et al. Annu. Rev. Mater. Sci. 25, 547–600 ( 1995).
Melloch, M.R. et al. Crit. Rev. Solid State Mater. Sci. 21, 189–263 ( 1996).
Pan, J.L. Opt. Exp. 9, 796–805 ( 2001).
Pan, J.L. J. Appl. Phy. 92, 5991–6004 ( 2002).
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Prasad, S. A deep-level LED. Nature Mater 2, 359–360 (2003). https://doi.org/10.1038/nmat911
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DOI: https://doi.org/10.1038/nmat911
