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Dopant mapping for the nanotechnology age

Nature Materials volume 2, pages 129–131 (2003)Cite this article

The push for smaller microelectronics poses many challenges, such as locating dopant atoms in semiconductors with ever-increasing precision. The ideal technique must be able to detect single dopants with atomic resolution, and identify their electronic state. Neither is an easy task.

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Figure 1: The unrelenting miniaturization of microelectronics is throwing increasingly difficult challenges into the path of characterization experts.

© 1999 The American Physical Society

Figure 2: Scanning tunnelling microscope (STM) image of a (110) cross section through a silicon-doped GaAs crystal.

© 1996 The American Physical Society

Figure 3: Three-dimensional atom probe (3DAP) reconstruction of 11 boron dopants (large pink dots) in silicon (small yellow dots).

Image courtesy of Alfred Cerezo (University of Oxford) and David Larson (Seagate Technology).

Figure 4: Secondary electron image of a cross-section through an InGaAsP-based laser device taken by a scanning electron microscope (SEM).

© 2000 Oxford University Press.

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Authors and Affiliations

  1. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

    Martin R. Castell

  2. Bell Labs, Lucent Technologies, 600 Mt Ave, Murray Hill, 07974, New Jersey, USA

    David A. Muller

  3. Department of Materials Science and Engineering, University of Wisconsin, Madison, 53706, Wisconsin, USA

    Paul M. Voyles

Authors
  1. Martin R. Castell
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  2. David A. Muller
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  3. Paul M. Voyles
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Correspondence to Martin R. Castell.

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Castell, M., Muller, D. & Voyles, P. Dopant mapping for the nanotechnology age. Nature Mater 2, 129–131 (2003). https://doi.org/10.1038/nmat840

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