Abstract
The integration of materials having a high dielectric constant (high-κ) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high-κ (∼25) zirconium oxide thin-films (∼8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field-effect transistors. The p-type transistors exhibit subthreshold swings of S ∼ 70 mV per decade, approaching the room-temperature theoretical limit for field-effect transistors. Key transistor performance parameters, transconductance and carrier mobility reach 6,000 S m−1 (12 μS per tube) and 3,000 cm2 V−1 s−1 respectively. N-type field-effect transistors obtained by annealing the devices in hydrogen exhibit S ∼ 90 mV per decade. High voltage gains of up to 60 are obtained for complementary nanotube-based inverters. The atomic-layer deposition process affords gate insulators with high capacitance while being chemically benign to nanotubes, a key to the integration of advanced dielectrics into molecular electronics.
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Acknowledgements
The authors are grateful to D. Antoniadis, B. Triplett and C. Quate for critical comments, and A. Marshall for TEM assistance. This work was supported by MARCO Focused Research Center on Materials, Structures and Devices, Defense Advanced Research Projects/Moletronics, ABB Group Ltd., the Lucille Packard Foundation, the Alfred Sloan Foundation, a Dreyfus Teacher-Scholar Award, a Mayfield Stanford Graduate Fellowship and the National Science Foundation (NSF) Center for Nanoscale Systems. Part of the fabrication was performed at the Cornell Nanofabrication Facility, a node of the National Nanofabrication users Network, funded by NSF.
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Javey, A., Kim, H., Brink, M. et al. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Mater 1, 241–246 (2002). https://doi.org/10.1038/nmat769
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DOI: https://doi.org/10.1038/nmat769
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