Abstract
Increasing attention is being focused on the properties and behaviour of p-type semiconductor electrodes. For instance, p-type GaP electrodes have been used in photoelectrochemical cells for water splitting1, CO2 reduction2 and N2 fixation3. We report here the quantum efficiency–potential characteristics for H2 evolution at an irradiated p-GaP electrode. The curves have been evaluated using a Schottky barrier model of the semiconductor/electrolyte interface4.
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McCann, J., Handley, L. The photoelectrochemical effect at a p-GaP electrode. Nature 283, 843–845 (1980). https://doi.org/10.1038/283843a0
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DOI: https://doi.org/10.1038/283843a0
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