Abstract
THIS communication describes a method of preparing colourless, extremely pure crystals of α-silicon carbide by a modified Lely process in a high-vacuum, high-temperature furnace from silicon of a purity sufficient for semi-conductors and pure graphite. The temperature at which the main reaction occurs, in the course of which the crystals are formed, is 2,800° C. The energy gap, determined according to the method devised by Macfarlane and Roberts, is 2.96 eV. Crystal wafers 100–200µ thick with fresh surfaces exhibited a transmission factor of 80–85 per cent at the characteristic wave-length of 2–4µ.
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References
Lely, J. A., Ber. dtsch. Keram. Ges., 32, 229 (1955).
Lipson, H. G., Proc. Conf. Silicon Carbide, Boston, 1959, 371 (Pergamon Press, London, 1960).
Choyke, W. J., Proc. Conf. Silicon Carbide, Boston, 1959, 306 (Pergamon Press, London, 1960).
Macfarlane, G. G., and Roberts, V., Phys. Rev., 97, 1714 (1955); 98, 1965 (1955).
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DOSER, E. A Simple Method of Producing Extremely Pure Crystals of α-Silicon Carbide. Nature 211, 731–732 (1966). https://doi.org/10.1038/211731a0
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DOI: https://doi.org/10.1038/211731a0
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