Abstract
THE application of the semi-conducting properties of germanium and silicon in devices of great technical importance has in recent years stimulated interest in the III–V compounds1. Compounds of the group III elements aluminium, gallium and indium with the group V elements phosphorus, arsenic and antimony have the cubic zinc-blende structure, which is closely related to the diamond structure of the group IV elements carbon, silicon, germanium and grey tin. The nitrides of aluminium, gallium and indium have the hexagonal wurtzite structure. The nitride of boron, the lightest of the group III elements, has a graphite-like hexagonal layer lattice.
Similar content being viewed by others
Article PDF
References
Welker, H., Z. f. Naturf., 7 a, 744 (1952); 8 a, 248 (1953).
For example, The Times, p. 8, Feb. 14 1957.
Moissan, H., C.R. Acad. Sci., Paris, 113, 624, 726, 787 (1891). Besson, A., ibid., 113, 78 (1891).
Herman, F., J. Electronics, 1, 103 (1955).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
POPPER, P., INGLES, T. Boron Phosphide, a III–V Compound of Zinc-Blende Structure. Nature 179, 1075 (1957). https://doi.org/10.1038/1791075a0
Issue Date:
DOI: https://doi.org/10.1038/1791075a0
This article is cited by
-
Enhanced Electronic Thermal Conductivity and Heat Capacity of Biased Bilayer Boron Phosphide with Magnetic Field
Journal of Electronic Materials (2022)
-
Native Point Defects in Monolayer Hexagonal Boron Phosphide from First Principles
Journal of Electronic Materials (2020)
-
A Novel Spherical Boron Phosphide as a High-Efficiency Overall Water Splitting Catalyst: A Density Functional Theory Study
Catalysis Letters (2020)
Comments
By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.