Two-dimensional materials articles from across Nature Portfolio

The Curie temperature of Fe_5+xGeTe₂ thin films can be modulated from 260 to 380 K via iron doping, allowing the two-dimensional material to be used to create planar spiral inductors and low-pass Butterworth filters.

Multiple alternating layers of two-dimensional materials and epilayers are grown on III–N and III–V substrates in a single growth run. Then, each epilayer is harvested by mechanical exfoliation, producing multiple freestanding membranes from a single wafer.

By integrating split ferroelectric capacitors with complementary characteristics in the same memory cell, this architecture tackles the problem of conflicting memory requirements for training and inference, which has long plagued edge intelligence applications.

Lattice shrinkage is a dominating factor for the strain-induced change of the electronic properties in vdW layered materials. Here, the authors discover a piezoresistivity in pressurized β′-In2Se3, which originates from the intralayer atomic motions.

The authors embed a multiple quantum-well WS₂ heterostructure in a planar microcavity and show the systematic control of the normal mode coupling-strength. They find a strong enhancement of the characteristic time scale, which they attribute to long-lived dark excitations emerging in the structure.