Nanoscale devices articles from across Nature Portfolio

Machine-learning-driven atomistic simulations are shown to describe phase-change materials on the length scale of real devices. This demonstration suggests that the atomic-scale design of phase-change architectures, programming conditions and full devices could be within reach.

Quantum dots couple to form artificial molecules that allow for variable colour emission in response to an electric field.

Drawing inspiration from classical semiconductor technology, a strategy to address many quantum dots through a small number of control lines is presented. The two-dimensional array consisting of 16 germanium quantum dots can be tuned in the few-hole regime with odd charge fillings and individually addressable tunnel couplings.

Memory devices with open-loop analog programmability are highly desired in training tasks. Here, the authors developed an electrochemical memory array that can be accurately programmed without any feedback, offering unique capabilities for training.

The quest for miniaturisation of electromechanical nanosystems requires the use of single molecules as active components. Here, the authors develop a piezoresistor based on a single bullvalene molecule that changes its shape by a Cope rearrangement.

Designing efficient AI hardware capable of creating artificial general intelligence remains a challenge. Here, the authors present an approach for the on-demand generation of complex networks within a single memristor by harnessing device dynamics with intrinsic cycle-to-cycle variability and demonstrate the effectiveness of memristive complex network-based reservoirs.

It remains challenging to integrate memory, sensing and computing in one device. Here a compact in-memory sensing and computing architecture based on ferroelectric-defined reconfigurable two-dimensional photodiode arrays has been reported.

Topoelectrical circuits are suitable to realise and study a range of exotic physical phenomenon that may be less straightforward to investigate using other platforms. Here, the authors demonstrate topologically protected edge states using integrated circuits based on a Kitaev topological superconductor model.

A reconfigurable field-effect transistor based on a hexagonal boron nitride/rhenium diselenide/hexagonal boron nitride heterostructure can offer nonvolatile control of its channel conductivity via photoinduced trapping of electrons or holes at the bottom dielectric interface.

Machine-learning-driven atomistic simulations are shown to describe phase-change materials on the length scale of real devices. This demonstration suggests that the atomic-scale design of phase-change architectures, programming conditions and full devices could be within reach.

An article in Science reports a co-polymer with both semiconducting and adhesive properties, which can effectively stick an organic electrochemical transistor (OECT)-based sensor to living tissues.

Quantum dots couple to form artificial molecules that allow for variable colour emission in response to an electric field.

Drawing inspiration from classical semiconductor technology, a strategy to address many quantum dots through a small number of control lines is presented. The two-dimensional array consisting of 16 germanium quantum dots can be tuned in the few-hole regime with odd charge fillings and individually addressable tunnel couplings.