Inorganic LEDs articles from across Nature Portfolio

Ultra-high brightness green Micro-LEDs with 5 μm pixels were achieved using uniform GaN-on-Si epilayers, exceeding 10⁷ cd/m² brightness and enabling high-resolution Micro-LED displays with CMOS circuit integration.

We present a design principle to suppress concentration quenching in Rb₃Y(PO₄)₂:Eu by separating activators and prolonging distance, in which quenching rates are controlled by varying Eu distribution at different sites.

Su et al. report a single photon counting technique to trace the electron transport paths at different voltages for QLEDs, revealing the leakage electrons into the hole transport layer or recombination at the interface, providing unambiguous understanding in the device operation and degradation mechanism.

We report a deep-trap ultraviolet persistent phosphor with thermoluminescence glow peaks beyond 500 K that exhibits intense and long-lasting ultraviolet luminescence under indoor lighting conditions but emits negligible afterglow in darkness.

Spin-polarized light-emitting diodes (spin-LEDs) convert the electronic spin information to photon circular polarization, but they are usually controlled only by external magnetic fields. Here, the authors report the realization of spin-LEDs based on 2D CrI₃/hBN/WSe₂ heterostructures, showing electrical tunability of the electroluminescence helicity.

Light extraction is a key factor determining the efficiency of light-emitting diodes. This becomes more pronounced in high-refractive-index perovskite light-emitting diodes according to the ray-optics model. Photon recycling and microcavity effect are important ways to break through the ray-optics efficiency limit. However, these two effects are competing, that is, strategies to optimize them are mutually exclusive. For a breakthrough in efficiency, we should favour one of them and inhibit the other.

A single monolayer semiconductor integrated into a plasmonic tunnel junction exhibits electroluminescence with photon energies that exceed the excitation electron potential. This phenomenon is shown to be indirectly triggered by inelastically tunnelling electrons.

High-quality aluminium nitride (AlN) heteroepitaxial films are obtained by the controlled discretization and coalescence of columns using nanopatterned AlN/sapphire templates with regular hexagonal holes. The density of dislocation etch pits in the AlN heteroepitaxial films is reduced to approximately 10⁴ cm^–2, approaching the value of that in AlN bulk single crystals.

Micro-light-emitting-diode display applications are growing quickly as technology companies begin to use them in a range of products. Key to the development of these applications was the miniaturization of gallium nitride light-emitting diodes. Hongxing Jiang and Jingyu Lin recount how this was achieved.