Information storage

By using optoelectronic device arrays for chip-to-chip communication and neuromorphic cores based on memristor crossbar arrays for highly parallel data processing, reconfigurable and stackable hetero-integrated chips can be created for use in edge computing applications.

Anisotropic functional patterned surfaces have shown significant applications in microfluidics, biomedicine, and optoelectronics. Here, authors demonstrate a fast and mask-free etching method for accurate surface patterning by confined decomposition, enabling the efficient fabrication of complex patterns.

Neuromorphic computing requires the realization of high-density and reliable random-access memories. Here, Thean et al. demonstrate wafer-scale integration of solution-processed 2D MoS2 memristor arrays which show long endurance, long memory retention, low device variations, and high on/off ratio.

Researchers demonstrate a multilevel non-volatile phase shifter memory that is based on the monolithic integration of BaTiO₃ thin films and silicon waveguides. By manipulating ferroelectric domains in BaTiO₃ with electrical control signals, they achieve analogue and non-volatile optical phase tuning.

Thin films of BaTiO₃ do not possess the same small switching fields and energies as the single-crystal form, hindering applications. Here, thin films are synthesized that enable switching for voltages <100 mV and fields <10 kV cm^–1, and a pathway to subnanosecond switching is presented.