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Diode lasers are electrically driven lasers generally made from semiconducting materials. In addition to the optical considerations common with all semiconductors, diode laser structures must also incorporate a means of injecting an electrical current into the active region. This often involves extra semiconductor layers and metal contacts.
Mid-infrared light emitting diodes (LEDs) based on black phosphorus (BP) have shown promising performance, but they are usually limited by the environmental instability of the material. Here, the authors extrapolate a room-temperature operational lifetime of BP LEDs up to ~ 15,000 h via Al2O3 passivation and nitrogen seal packaging.
Investigation of the spectral narrowing physics of self-injection-locked on-chip lasers to Hz-level linewidth using a composite-cavity structure. Heterogeneously integrated III–V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed.
The quasi PT-symmetry design enables the creation of electrically pumped large-area edge-emitting lasers with high power single-mode emissions by selectively inducing loss on high-order modes.
Diode lasers represent a viable alternative to light sources used in many biomedical applications. Their ongoing development will further increase their importance, offering not only multiple wavelength ranges, but also higher power levels.
