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The image depicts a simulated intensity distribution of a scattering invariant mode (SIM) propagating through a thin layer of disordered material. The defining property of SIMs is that their output pattern is identical to the case of free space propagation. As shown in this issue, SIMs can be realized experimentally in much thicker materials that scatter light strongly.
The successful demonstration of two-stage acceleration driven by terahertz pulses bodes well for the future development of compact, efficient particle accelerators.
A new way to define the shape of tiny light-emitting semiconductor pixels provides a means to fabricate arrays of InGaN blue micro-LEDs with a resolution as high as 8,500 pixels per inch.
Tunnelling currents inside plasmonic nanostructures are fast enough to gain direct access to the oscillating electric field of near-infrared and visible light, opening up exciting routes towards attosecond metrology of light–matter interaction and unique approaches to spectroscopy.
A relativistic electron beam with 1.9 pC charge is accelerated by copropagating with a terahertz pulse through two dielectric-loaded waveguides. The accelerating gradient in a single dielectric-loaded waveguide is 85 MV m−1. The total energy gain is 204 keV.
The concept of scattering invariant modes is introduced to produce the same transmitted field profiles through a multiple scattering sample and a reference medium. Their correlations with the ballistic light can be used to improve imaging inside scattering materials.
A hard X-ray self-seeded X-ray free-electron laser at the Pohang Accelerator Laboratory provides X-ray pulses with peak brightness of 3.2 × 1035 photons s–1 mm–2 mrad–2 0.1%BW–1 at 9.7 keV and a very small shot-to-shot electron energy jitter of 0.012%.
A near-field imaging approach based on nonlinear wave mixing that can provide a detailed picture of evanescent waves in real time and with a single shot is demonstrated. Using only standard optical components, this approach will make near-field imaging much more affordable and accessible.
Submicrometre-sized InGaN-based light-emitting diodes are fabricated by tailored ion implantation. The devices are free from electrical leakage and show a luminance of 7,440 nit at 4.9 A cm−2 even at the line/space scale of 0.5/0.5 μm (= 8,500 ppi).
An on-chip, sub-optical-cycle sampling technique for measuring arbitrary electric fields of few-femtojoule near-infrared optical pulses in ambient conditions is demonstrated, offering an improvement of roughly six orders of magnitude in energy sensitivity compared with those previous works in the near-infrared.
A three-step staircase avalanche diode was demonstrated and pre-cited gain scaling was confirmed. The technology may be considered as a solid-state analogue to the photomultiplier tube.
An electron spin polarization of 90% is achieved in a non-magnetic nanostructure at room temperature without magnetic field. This is accomplished by remote spin filtering of InAs quantum-dot electrons via an adjacent tunnelling-coupled GaNAs spin filter.