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Volume 5 Issue 6, June 2010

The epitaxial growth of germanium on silicon leads to the selfassembly of SiGe nanocrystals with well-defined properties. Silvano De Franceschi and co-workers have now attached aluminium electrodes to individual nanocrystals to study the behaviour of holes in this system. They also make a hybrid superconductor-semiconductor device called a resonant supercurrent transistor by cooling their device below the superconducting transition temperature of aluminium. The cover shows d2 I/dV 2 as a function of the applied bias voltage V (vertical axis) and magnetic field (horizontal axis), where I is the current carried by the holes; high positive values of d2 I/dV 2 are shown in red, and low negative values in green. The oval structure in the middle is due to the opening of a superconducting gap in the aluminium contacts for values of the magnetic field around zero.

Cover design by Karen Moore

Article p458

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